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mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 1 rf device data freescale semiconductor rf power field effect transistors n ? channel enhancement ? mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies to 175 mhz. the high gain and broadband performance of these devices make them ideal for large ? signal, common source amplifier applications in 12.5 volt mobile fm equipment. ? specified performance @ 175 mhz, 12.5 volts output power ? 50 watts power gain ? 12 db efficiency ? 50% ? capable of handling 20:1 vswr, @ 15.6 vdc, 175 mhz, 2 db overdrive ? excellent thermal stability ? characterized with series equivalent large ? signal impedance parameters ? broadband ? full power across the band: 135 ? 175 mhz ? broadband demonstration amplifier information available upon request ? n suffix indicates lead ? free terminations ? in tape and reel. t1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain ? source voltage v dss ? 0.5, +40 vdc gate ? source voltage v gs 20 vdc drain current ? continuous i d 12 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 165 0.50 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 175 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.75 c/w table 3. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 ? a113, ipc/jedec j ? std ? 020 1 260 c 1. calculated based on the formula p d = note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. MRF1550T1 rev. 7, 1/2005 freescale semiconductor technical data 175 mhz, 50 w, 12.5 v lateral n ? channel broadband rf power mosfets mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 case 1264 ? 09, style 1 to ? 272 plastic MRF1550T1(nt1) case 1264a ? 02, style 1 to ? 272 straight lead plastic mrf1550ft1(fnt1) t j? t c r jc ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate ? source leakage current (v gs = 10 vdc, v ds = 0 vdc) i gss ? ? 0.5 adc on characteristics gate threshold voltage (v ds = 12.5 vdc, i d = 800 a) v gs(th) 1 ? 3 vdc drain ? source on ? voltage (v gs = 5 vdc, i d = 1.2 a) r ds(on) ? ? 0.5 ? drain ? source on ? voltage (v gs = 10 vdc, i d = 4.0 adc) v ds(on) ? ? 1 vdc dynamic characteristics input capacitance (includes input matching capacitance) (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c iss ? ? 500 pf output capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c oss ? ? 250 pf reverse transfer capacitance (v ds = 12.5 vdc, v gs = 0 v, f = 1 mhz) c rss ? ? 35 pf rf characteristics (in freescale test fixture) common ? source amplifier power gain (v dd = 12.5 vdc, p out = 50 watts, i dq = 500 ma) f = 175 mhz g ps 10 ? ? db drain efficiency (v dd = 12.5 vdc, p out = 50 watts, i dq = 500 ma) f = 175 mhz 50 ? ? % load mismatch (v dd = 15.6 vdc, f = 175 mhz, 2 db input overdrive, vswr 20:1 at all phase angles) no degradation in output power before and after test
mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 3 rf device data freescale semiconductor figure 1. 135 ? 175 mhz broadband test circuit b1 ferroxcube #vk200 c1 180 pf, 100 mil chip capacitor c2 10 pf, 100 mil chip capacitor c3 33 pf, 100 mil chip capacitor c4, c16 24 pf, 100 mil chip capacitors c5 160 pf, 100 mil chip capacitor c6 240 pf, 100 mil chip capacitor c7, c17 300 pf, 100 mil chip capacitors c8, c18 10 f, 50 v electrolytic capacitors c9, c19 0.1 f, 100 mil chip capacitors c10 470 pf, 100 mil chip capacitor c11, c12 200 pf, 100 mil chip capacitors c13 22 pf, 100 mil chip capacitor c14 30 pf, 100 mil chip capacitor c15 6.8 pf, 100 mil chip capacitor c20 1,000 pf, 100 mil chip capacitor l1 18.5 nh, coilcraft #a05t l2 5 nh, coilcraft #a02t l3 1 turn, #24 awg, 0.250 id l4 1 turn, #26 awg, 0.240 id l5 3 turn, #24 awg, 0.180 id n1, n2 type n flange mounts r1 5.1 ? , 1/4 w chip resistor r2 39 ? chip resistor (0805) r3 1 k ? , 1/8 w chip resistor r4 33 k ? , 1/4 w chip resistor z1 1.000 x 0.080 microstrip z2 0.400 x 0.080 microstrip z3 0.200 x 0.080 microstrip z4 0.200 x 0.080 microstrip z5, z6 0.100 x 0.223 microstrip z7 0.160 x 0.080 microstrip z8 0.260 x 0.080 microstrip z9 0.280 x 0.080 microstrip z10 0.270 x 0.080 microstrip z11 0.730 x 0.080 microstrip board glass teflon ? , 31 mils typical characteristics figure 2. output power versus input power figure 3. input return loss versus output power
4 rf device data freescale semiconductor mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 typical characteristics figure 4. gain versus output power figure 5. drain efficiency versus output power figure 6. output power versus biasing current figure 7. drain efficiency versus biasing current figure 8. output power versus supply voltage figure 9. drain efficiency versus supply voltage
mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 5 rf device data freescale semiconductor z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in ? z ol * ? 135 4.1 + j0.5 1.0 + j0.6 155 4.2 + j1.7 1.2 + j.09 175 3.7 + j2.3 0.7 + j1.1 ? figure 10. series equivalent input and output impedance
6 rf device data freescale semiconductor mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 table 5. common source scattering parameters (v dd = 12.5 vdc) i dq = 500 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.93 ? 178 4.817 80 0.009 ? 39 0.86 ? 176 100 0.94 ? 178 2.212 69 0.009 ? 3 0.88 ? 175 150 0.95 ? 178 1.349 61 0.008 ? 8 0.90 ? 174 200 0.95 ? 178 0.892 54 0.006 ? 13 0.92 ? 174 250 0.96 ? 178 0.648 51 0.005 ? 7 0.93 ? 174 300 0.97 ? 178 0.481 47 0.004 ? 8 0.95 ? 174 350 0.97 ? 178 0.370 46 0.005 4 0.95 ? 174 400 0.98 ? 178 0.304 43 0.001 15 0.97 ? 174 450 0.98 ? 178 0.245 43 0.005 81 0.97 ? 174 500 0.98 ? 178 0.209 43 0.003 84 0.97 ? 174 550 0.99 ? 177 0.178 41 0.007 70 0.98 ? 175 600 0.98 ? 178 0.149 41 0.010 106 0.96 ? 175 i dq = 2.0 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.93 ? 177 4.81 80 0.003 ? 11 9 0.93 ? 178 100 0.94 ? 178 2.20 69 0.006 4 0.93 ? 178 150 0.95 ? 178 1.35 61 0.003 ? 1 0.93 ? 177 200 0.95 ? 178 0.89 54 0.004 18 0.93 ? 176 250 0.96 ? 178 0.65 51 0.001 28 0.94 ? 176 300 0.97 ? 178 0.48 47 0.004 77 0.94 ? 175 350 0.97 ? 178 0.37 46 0.006 85 0.95 ? 175 400 0.98 ? 178 0.30 43 0.007 53 0.96 ? 174 450 0.98 ? 178 0.25 43 0.006 74 0.97 ? 174 500 0.98 ? 177 0.21 44 0.006 84 0.97 ? 174 550 0.99 ? 177 0.18 41 0.002 106 0.97 ? 175 600 0.98 ? 178 0.15 41 0.004 116 0.96 ? 174 i dq = 4.0 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 50 0.97 ? 179 5.04 87 0.002 ? 11 6 0.94 ? 179 100 0.96 ? 179 2.43 82 0.006 42 0.94 ? 178 150 0.96 ? 179 1.60 77 0.004 13 0.94 ? 177 200 0.96 ? 179 1.14 74 0.003 43 0.95 ? 176 250 0.97 ? 179 0.89 71 0.004 65 0.95 ? 175 300 0.97 ? 179 0.71 68 0.006 68 0.95 ? 175 350 0.97 ? 179 0.57 67 0.006 74 0.97 ? 174
mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 7 rf device data freescale semiconductor table 5. common source scattering parameters (v dd = 12.5 vdc) (continued) i dq = 4.0 ma (continued) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 400 0.97 ? 179 0.49 63 0.005 58 0.97 ? 173 450 0.98 ? 178 0.41 63 0.005 73 0.98 ? 173 500 0.98 ? 178 0.36 62 0.003 128 0.98 ? 173 550 0.98 ? 178 0.32 58 0.004 57 0.99 ? 174 600 0.98 ? 178 0.27 58 0.009 83 0.98 ? 174
8 rf device data freescale semiconductor mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 applications information design considerations this device is a common ? source, rf power, n ? channel enhancement mode, lateral m etal ? o xide s emiconductor f ield ? e ffect t ransistor (mosfet). freescale application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf and uhf mobile power amplifier applications. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to in- sure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate ? to ? drain (c gd ), and gate ? to ? source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain ? to ? source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheets. the relationships be- tween the inter ? terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. drain characteristics one critical figure of merit for a fet is its static resistance in the full ? on condition. this on ? resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate ? source voltage and drain current. the drain ? source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high ? on the order of 10 9 ? ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate ? to ? source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open ? cir- cuited or floating should be avoided. these conditions can result in turn ? on of the devices due to voltage build ? up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate ? to ? source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate ? to ? source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate ? drain capacitance. if the gate ? to ? source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate ? threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line.
mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 9 rf device data freescale semiconductor mounting the specified maximum thermal resistance of 0.75 c/w assumes a majority of the 0.170 x 0.608 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to freescale application note an4005/d, ?thermal management and mounting meth- od for the pld ? 1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see freescale application note an721, ?impedance matching networks applied to rf power transistors.? large ? signal impedances are provid ed, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two ? port stability analysis with this device?s s ? parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see free- scale application note an215a, ?rf small ? signal design using two ? port parameters? for a discussion of two port network theory and stability.
10 rf device data freescale semiconductor mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 package dimensions to ? 272 plastic MRF1550T1(nt1) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ? 09 issue j l a1 c1 h d c a b

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12 rf device data freescale semiconductor mrf1550nt1 mrf1550fnt1 MRF1550T1 mrf1550ft1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e ? mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 ? 800 ? 521 ? 6274 or +1 ? 480 ? 768 ? 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 ? 8 ? 1, shimo ? meguro, meguro ? ku, tokyo 153 ? 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 ? 800 ? 441 ? 2447 or 303 ? 675 ? 2140 fax: 303 ? 675 ? 2150 ldcforfreescalesemiconductor@hibbertgroup.com MRF1550T1 rev. 7, 1/2005 document number:

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